Спецификации
| Атрибут | Ценность |
| Supplier | Diodes Incorporated |
| Package / Case | Bulk |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 4 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 200mV @ 400mA, 4A |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 2A, 2V |
| Power - Max | 1.2 W |
| Frequency - Transition | 130MHz |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
