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NTMS5P02R2G
+БОМMOSFET P-CH 20V 3.95A 8SOIC
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ПроизводительОнсеми
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Мфр. Часть #NTMS5P02R2G
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Лист данных NTMS5P02R2G DataSheet
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В наличии3154
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 3.95A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 33mOhm @ 5.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1900 pF @ 16 V |
| Power Dissipation (Max) | 790mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Обзор
Description
However, I can offer some general advice on what an introductory course might cover based on typical academic structures:
1. Overview of Subject Matter: An introduction to the fundamental concepts, theories, or practices relevant to the subject area.
2. Learning Objectives: Key skills and knowledge that students are expected to acquire by the end of the course.
3. Course Structure: A breakdown of the main topics or units that will be covered, possibly including lectures, discussions, labs, or practical assignments.
4. Assessment Methods: An outline of how students will be evaluated, which might include exams, essays, projects, or presentations.
5. Resources: Recommended textbooks, articles, or online materials for further reading and understanding.
For specific details, it's best to consult the course syllabus or contact the course instructor directly.
Equivalent
1. AON7403 from Alpha & Omega Semiconductor
2. FDS6679 from ON Semiconductor
3. IRF5305 from Infineon Technologies
4. SI4925DY from Vishay Siliconix
These alternatives have similar voltage ratings, current capabilities, and package types, making them suitable substitutes in various applications.
Features
1. Type: P-channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (V_DS) of -20V.
3. Current Rating: It can handle a continuous drain current (I_D) of up to -5.2A.
4. R_DS(on): The on-resistance is low, typically around 39 mOhms, which helps in minimizing power loss and improving efficiency in applications.
5. Package: Available in a small SOT-23 package, which is suitable for space-constrained applications.
6. Application: Commonly used in power management, switching applications, and load switching in battery-powered devices.
7. Temperature Range: Operates efficiently over a wide temperature range, typically from -55°C to 150°C.
8. Gate Threshold Voltage: The gate threshold voltage is typically between -0.9V to -1.6V, which determines the voltage required to turn the MOSFET on.
9. ESD Protection: It may include protection against electrostatic discharge (ESD).
These features make the NTMS5P02R2G a versatile choice for various electronic applications requiring efficient power management and switching.
Pinout
1. Gate (Pin 1): This pin is used to control the MOSFET. Applying a voltage to the gate changes the conductivity between the drain and source, allowing the MOSFET to switch on or off.
2. Drain (Pin 2): This pin is connected to the load that the MOSFET is switching. The current flows from source to drain when the MOSFET is on.
3. Source (Pin 3): This is the pin where the current enters the MOSFET. In a P-channel MOSFET, the source is typically connected to the higher voltage in the circuit.
4. Tab: The tab is also connected to the drain and is used for heat dissipation. In some designs, it can also be used as an electrical connection.
This MOSFET is used for various applications including load switching and power management due to its low on-resistance and efficient switching capability.