Part A
IRFP4768PBF
компанией Infineon Technologies
- Lifecycle
- Active
- Stock
- 7193 ПКС
- Series
- Транзисторы - FET, MOSFET - Одиночные FET, MOSFET
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRFP4768PBF | IRFP460A |
|---|---|---|
| Part Status | Last Time Buy | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V | 500 V |
| Current - Continuous Drain(Id) @ 25°C | - | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | - | 10V |
| Rds On(Max) @ Id Vgs | - | 270mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | - | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 105 nC @ 10 V |
| Vgs(Max) | - | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 3100 pF @ 25 V |
| Power Dissipation (Max) | 520W (Tc) | 280W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Series | HEXFET® | - |
| Base Product Number | IRFP4768 | - |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 56A, 10V | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 10880 pF @ 50 V | - |
| Packaging | Tube | - |